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| MITSUBISHI SEMICONDUCTOR M54534P/FP 6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE DESCRIPTION M54534P and M54534FP are six-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION (TOP VIEW) STROBE INPUT STB 1 IN1 2 IN2 3 IN3 4 INPUT IN4 5 IN5 6 IN6 7 GND 8 16 VCC 15 O1 14 O2 13 O3 12 O4 11 O5 10 O6 9 COM COMMON OUTPUT FEATURES q Medium breakdown voltage (BVCEO 20V) q High-current driving (Ic(max) =320mA) q With clamping diodes q Wide input voltage range (VI = -25 to +20V) q Wide operating temperature range (Ta = -20 to +75C) q With strobe input 16P4(P) Outline 16P2N-A(FP) CIRCUIT SCHEMATIC (EACH CIRCUIT) APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps). 1.6k INPUT 20k 2k GND STB STROBE INPUT The six circuits share the STB, COM, VCC, GND. The diodes shown by broken line are parasite diodes and must not be use. Unit : OUTPUT 380 VCC COM FUNCTION The M54534P and M54534FP each have six circuits consisting of NPN transistors. Each input has a diode and 1.6k esistor in series. Each input is connected, and each output is connected spike-killer clamping diode, emitters of each transistor is connected to GND (pin 8), strobe input is connected to (pin 1), clamping diode is connected COM pin (pin 9) and VCC is connected to the pin 16 in common. The collector current is 320mA maximum. Collector-emitter supply voltage is 20V maximum. M54534FP is enclosed in a molded small flat package, enabling space-saving design. ABSOLUTE MAXIMUM RATINGS Symbol VCC VCEO IC VI V(STB) IF VR Pd Topr Tstg Parameter Supply voltage Collector-emitter voltage Collector current Input voltage Strobe input voltage (Unless otherwise noted, Ta = -20 ~ +75C) Conditions Output, H Current per circuit output, L Ratings 10 -0.5 ~ +20 320 -25 ~ +20 -0.5~ +20 320 Unit V V mA V V mA V W C C Aug.1999 Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Ta = 25C, when mounted on board 20 1.47/1.00 -20 ~ +75 -55 ~ +125 MITSUBISHI SEMICONDUCTOR M54534P/FP 6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE FUNCTIONAL TABLE IN L H L H STB L L H H OUT H H H L RECOMMENDED OPERATING CONDITIONS Symbol VCC VO Supply voltage Output voltage Collector current Per channel "H" Input voltage "L" Input voltage "H" Input voltage (strobe input) "L" Input voltage (strobe input) Parameter (Unless otherwise noted, Ta = -20 ~ +75C) min 3 0 Limits typ -- -- -- -- -- -- -- -- max 8 20 300 Unit V V IC VCC = 6.5V, Duty Cycle P : no more than 25% FP : no more than 15% VCC = 6.5V, Duty Cycle P : no more than 65% FP : no more than 35% 0 0 3.2 0 2.4 0 mA 150 18 0.7 18 0.2 V V V V VIH VIL VIH(STB) VIL(STB) ELECTRICAL CHARACTERISTICS Symbol V (BR) CEO VCE (sat) II IIR II(STB) IR(STB) VF IR ICC hFE Parameter (Unless otherwise noted, Ta = -20 ~ +75C) Test conditions VCC = 8V, VI = 3.2V, VI(STB) = 0.2V, ICEO = 100A VI = 3.2V VCC = 6.5V, IC = 250mA Collector-emitter saturation voltage VI(STB) = 2.4V VCC = 3V, IC = 120mA Input current Input reverse current Strobe input current Strobe input reverse current Clamping diode forward voltage Clamping diode reverse current Supply current DC amplification factor VCC = 8V, VI = 3.2V, VI(STB) = 2.4V VCC = 8V, VI = -25V VCC = 8V, VI = 3.2V (all input), VI(STB) = 0.2V VCC = 8V, VI = 0V, VI(STB) = 20V IF = 320mA VR = 20V VCC = 8V, VI = 3.2V (all input), VI(STB) = 2.4V VCE = 4V, VCC = 6.5V, IC = 300mA, Ta = 25C, VI(STB) = 2.4V Collector-emitter breakdown voltage min 20 -- -- -- -- -- -- -- -- -- 1000 Limits typ+ -- 0.3 0.15 0.5 -- -7.9 -- 1.4 -- 120 3000 max -- 0.85 0.5 1.4 -20 -20 20 2.4 100 200 -- Unit V V mA A mA A V A mA -- + : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions min -- -- Limits typ 22 1200 max -- -- Unit ns ns Aug.1999 MITSUBISHI SEMICONDUCTOR M54534P/FP 6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE NOTE 1 TEST CIRCUIT INPUT VCC Measured device OPEN PG STB 50 CL OUTPUT OUTPUT 50% 50% TIMING DIAGRAM VO 50% 50% RL INPUT ton toff (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VP = 3.2VP-P (2) Input-output conditions : RL = 40, VO = 10V, VCC = VSTB = 6.5V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics 400 Thermal Derating Factor Characteristics 2.0 Power dissipation Pd (W) 1.5 M54534P Collector current Ic (mA) 300 1.0 M54534FP 200 VI = 3.2V VCC = 3V VSTB = 2.4V Ta = 75C Ta = 25C Ta = -20C 0.5 100 0 0 25 50 75 100 0 0 0.1 0.2 0.3 0.4 0.5 Ambient temperature Ta (C) Duty-Cycle-Collector Characteristics (M54534P) 400 400 Output saturation voltage VCE (sat) (V) Duty-Cycle-Collector Characteristics (M54534P) Collector current Ic (mA) 300 Collector current Ic (mA) 1~3 4 5 200 6 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C, VCC = 6.5V 1,2 300 3 200 4 100 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 75C, VCC = 6.5V 5 6 100 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty cycle (%) Aug.1999 MITSUBISHI SEMICONDUCTOR M54534P/FP 6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE Duty-Cycle-Collector Characteristics (M54534FP) 400 400 Duty-Cycle-Collector Characteristics (M54534FP) Collector current Ic (mA) Collector current Ic (mA) 1,2 300 3 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C, VCC = 6.5V 300 1 2 4 5 6 200 3 100 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 75C, VCC = 6.5V 100 4 5 6 100 0 0 20 40 60 80 100 0 0 20 40 60 80 Duty cycle (%) DC Amplification Factor Collector Current Characteristics 104 DC amplification factor hFE 7 5 Duty cycle (%) Grounded Emitter Transfer Characteristics 400 VCC = 6.5V, VI(STB) = 2.4V VCE = 4V Ta = 75C Ta = 25C Ta = -20C Collector current Ic (mA) 3 300 103 7 5 3 VCC = 6.5V, VI(STB) = 2.4V VCE = 4V Ta = 75C Ta = 25C Ta = -20C 200 100 102 1 10 3 5 7 102 3 5 7 103 0 0 1 2 3 4 Collector current Ic (mA) Input voltage VI (V) Input Characteristics 10 VCC = 8V VSTB = 2.4V Ta = 75C Ta = 25C Ta = -20C Supply Current Characteristics (common) 200 VSTB = 2.4V VI = 3.2V Ta = 75C Ta = 25C Ta = -20C Supply current ICC (mA) 8 Input current II (mA) 150 6 100 4 2 50 0 0 5 10 15 20 0 0 2 4 6 8 10 Input voltage VI (V) Supply voltage VCC (V) Aug.1999 MITSUBISHI SEMICONDUCTOR M54534P/FP 6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE Clamping Diode Characteristics 400 Forward bias current IF (mA) 300 Ta = 75C Ta = 25C Ta = -20C 200 100 0 0 0.5 1.0 1.5 2.0 Forward bias voltage VF (V) Aug.1999 |
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